Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range
Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range
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DOI：
10.1063/1.2149371
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发表时间：
2005-12
影响因子：
4
通讯作者：
C. Schlichenmaier;A. Thränhardt;T. Meier;S. Koch;W. Chow;J. Hader;J. Moloney
中科院分区：
文献类型：
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作者：
C. Schlichenmaier;A. Thränhardt;T. Meier;S. Koch;W. Chow;J. Hader;J. Moloney
使用微观模型分析 (GaIn)(NAs)∕GaAs 量子阱在 1.3–1.55μm 范围内的增益和损耗特性，包括俄歇和辐射复合。计算表明，只要能够获得良好的材料质量，由于其特定的能带结构特性，生长高压缩应变的样品是优选的。峰值增益略高于 1000cm−1 时，可以实现最佳激光操作。
A microscopic model is used to analyze gain and loss properties of (GaIn)(NAs)∕GaAs quantum wells in the 1.3–1.55μm range, including Auger and radiative recombination. The calculations show that, as long as good material quality can be achieved, growing highly compressively strained samples is preferable due to their specific band structure properties. Optimum laser operation is possible slightly above a peak gain of 1000cm−1.