HIGH-FREQUENCY SURFACE ACOUSTIC WAVE DEVICES AT VERY LOW TEMPERATURE : APPLICATION TO LOSS MECHANISMS EVALUATION
HIGH-FREQUENCY SURFACE ACOUSTIC WAVE DEVICES AT VERY LOW TEMPERATURE : APPLICATION TO LOSS MECHANISMS EVALUATION
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极低温度下的高频表面声波装置：应用于损耗机制评估
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
T. Thorvaldsson
中科院分区：
文献类型：
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作者：
A. E. Habti;F. Bastien;E. Bigler;T. Thorvaldsson
先前在5至25 MHz频率范围内的高性能体波谐振器的工作表明，通过冷却到液氦温度，声学损失变得可以忽略不计。因此，可以精确测量其他损失来源。在本工作中，针对高频表面波谐振器遵循类似的方法。在416 MHz的石英器件上进行了实验。结果表明，对于在良好的声表面波（SAW）谐振器中传播的表面波，声损耗的一个重要来源是由于固有声损耗。通过将器件冷却到低于30 K，品质因数Q显示出固有声学损耗的T-4依赖特性。在4-10 K以下，达到一个平台区. 416 MHz器件在4.2 K下获得了1.5×105范围内的高Q值，产生了7.5×1013的Q×f积，几乎与冷却体器件一样好。另一组在847 MHz下对铌酸锂（LiNbO 3）谐振器的测量结果并没有显着增加...
Previous work on high‐performance bulk wave resonators in the frequency range of 5 to 25 MHz has shown that, by cooling to liquid helium temperature, acoustic losses become negligible. Therefore other sources of losses can be precisely measured. A similar approach is followed in the present work for high‐frequency surface wave resonators. Experiments have been performed at 416 MHz on quartz devices. It is shown that for surface waves propagating in a good surface acoustic wave (SAW) resonator an important source of acoustic loss is due to intrinsic acoustic losses. By cooling the device to below 30 K, the quality factor Q shows a T−4 dependence characteristic of intrinsic acoustic losses. Below 4–10 K a plateau region is reached. High Q values in the range of 1.5×105 have been obtained at 4.2 K for 416‐MHz devices, yielding a Q×f product of 7.5×1013 almost as good as for cooled bulk devices. Another set of measurements on a lithium niobate (LiNbO3) resonator at 847 MHz does not give a significant increase...