Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth
Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth
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DOI：
10.1143/apex.3.105501
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发表时间：
2010-01-01
影响因子：
2.3
通讯作者：
Watanabe, Heiji
中科院分区：
文献类型：
--
作者：
Shimura, Takayoshi;Ogiwara, Shimpei;Watanabe, Heiji
我们展示了高品质的充分放松SiGe层的绝缘体上硅（SOI）衬底上的快速熔体生长的制造。成分梯度和晶体缺陷被限制在弛豫SiGe和残留SOI层之间的区域。在快速热退火过程中的表面粗糙度的退化被抑制的覆盖SiO2层。根据Si-Ge系统相图和Ge浓度的深度分布，讨论了生长机理。(C)2010日本应用物理学会
We demonstrate the fabrication of high-quality fully relaxed SiGe layers on a silicon-on-insulator (SOI) substrate by rapid melt growth. A compositional gradient and crystallographic defects are confined to a region between the relaxed SiGe and residual SOI layers. The degradation of surface roughness during rapid thermal annealing is suppressed by the capping SiO2 layer. The growth mechanism is discussed based on the phase diagram of the Si-Ge system and the depth profile of the Ge concentration. (C) 2010 The Japan Society of Applied Physics