High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires.
High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires.
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DOI：
10.1021/acs.nanolett.8b00842
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发表时间：
2018-05
期刊：
影响因子：
10.8
通讯作者：
J. Boland;F. Amaduzzi;S. Sterzl;H. Potts;L. Herz;A. Fontcuberta i Morral;M. Johnston
中科院分区：
文献类型：
--
作者：
J. Boland;F. Amaduzzi;S. Sterzl;H. Potts;L. Herz;A. Fontcuberta i Morral;M. Johnston
InAsSb纳米线是热电器件、红外光电探测器、高速晶体管以及热光伏电池的有前途的元件。通过改变Sb合金的分数，中红外带隙能量和热导率可以调整为特定的器件应用。使用太赫兹和拉曼非接触探针，我们发现Sb合金将纳米线中的电子迁移率从InAs提高了3倍以上，达到InAs0.65Sb0.35。我们还通过太赫兹和拉曼光谱提取了温度相关的电子迁移率，并报告了迄今为止InAs0.65Sb0.35纳米线的最高电子迁移率，在10 K下超过16,000 cm2 V-1 s-1。
InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs0.65Sb0.35. We also extract the temperature-dependent electron mobility via both terahertz and Raman spectroscopy, and we report the highest electron mobilities for InAs0.65Sb0.35 nanowires to date, exceeding 16,000 cm2 V-1 s-1 at 10 K.