Pressure-Induced Magnetoresistance in NbSe 3
Pressure-Induced Magnetoresistance in NbSe 3
复制标题
NbSe 3 中的压力感应磁阻
DOI：
10.1143/jpsj.69.3470
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发表时间：
2000
影响因子：
1.7
通讯作者：
K. Yamaya
中科院分区：
文献类型：
--
作者：
S. Yasuzuka;Y. Okajima;S. Tanda;N. Takeshita;N. Mōri;K. Yamaya
采用Bridgman压砧装置产生H平行于α轴的高压。图1显示了在P = 0 kbar时，H = 0和12 T的电阻（左侧标度）与温度的关系，以及H = 12 T的MR（右侧标度）在0和80 K之间的关系。磁场增强了由于T2-CDW形成（T2 = 55 K，H = 0 T）的电阻异常。在T2-CDW相形成后立即出现大的Δ ρ/ρ0;在T2以下观察到LMR。然而，在T2以上，<$ρ/ρ0小得可以忽略。在± 0.5K的实验误差范围内，T2与磁场无关。这些结果与以前的结果一致。图2显示了在P = 7.2 kbar时，H = 0和12 T的电阻（左侧标度）和H = 12 T的MR（右侧标度）在0和40 K之间的温度依赖性。T2-CDW转变温度（T2 = 23 K）和与T2-CDW形成相关的电阻异常被升高的压力抑制。然而，尽管T2-CDW阶段受到相当大的抑制，但是对于H = 12 T，在T2以下可以清楚地观察到电阻的大的驼峰。同样，在T2以下，Δ ρ/ρ0增加，并且即使在压力下也观察到LMR。这些结果与我们以前测量的H平行于c轴的结果一致。相比之下，在T2以上，Δ ρ/ρ0很小，在30 K时约为0.1。然而，这个值比环境压力下的大两个数量级，在70 K时约为3×10−3。即使在温度依赖性中考虑温度因素，其中ωc是回旋频率，τ是弛豫时间，在7.2 kbar下获得的高于T2的Δ ρ/ρ0也非常大。这表明日本物理学会MR杂志第69卷第10期，2000年10月，第10页的新出现。3470-3471短笔记
Bridgman anvil device was employed in order to generate high pressure with H parallel to the a∗-axis. Figure 1 shows the temperature dependence of resistance (left-hand scale) for H = 0 and 12 T and the MR for H = 12 T (right-hand scale) between 0 and 80 K at P = 0 kbar. The magnetic field enhances the resistance anomaly due to the T2-CDW formation (T2 = 55 K at H = 0 T). A large ∆ρ/ρ0 appears immediately upon the formation of the the T2-CDW phase; a LMR is observed below T2. However, above T2 ∆ρ/ρ0 is negligibly small. T2 is independent of the magnetic fields within our experimental error of ±0.5 K. These results agree well with previous results. Figure 2 shows the temperature dependence of resistance (left-hand scale) for H = 0 and 12 T and the MR for H = 12 T (right-hand scale) between 0 and 40 K at P = 7.2 kbar. The T2-CDW transition temperature (T2 = 23 K) and the resistance anomaly associated with T2-CDW formation are suppressed by increased pressure. Despite the considerable suppression of the T2-CDW phase however, a large hump in resistance can clearly be observed below T2 for H = 12 T. Again, ∆ρ/ρ0 increases below T2, and a LMR is observed even under pressure. These results agree with our previous results measured for H parallel to the c-axis. By contrast, ∆ρ/ρ0 is small above T2, with a magnitude of about 0.1 at 30 K. However, this value is about two orders of magnitude larger than that at ambient pressure, which is about 3×10−3 at 70 K. Even if the temperature factor is considered in the temperature dependence of ∆ρ/ρ0 ∼ (ωcτ ), where ωc is the cyclotron frequency and τ is the relaxation time, the ∆ρ/ρ0 above T2 obtained at 7.2 kbar is significantly large. This indicates the new appearance of the MR Journal of the Physical Society of Japan Vol. 69, No. 10, October, 2000, pp. 3470-3471 Short Notes