Fabrication and characterization of transparent conductive ZnO:Al thin films prepared by direct current magnetron sputtering with highly conductive ZnO(ZnAl2O4) ceramic target
Fabrication and characterization of transparent conductive ZnO:Al thin films prepared by direct current magnetron sputtering with highly conductive ZnO(ZnAl2O4) ceramic target
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DOI：
10.1016/s0022-0248(02)02012-2
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发表时间：
2003-01-01
影响因子：
1.8
通讯作者：
Yao, BL
中科院分区：
文献类型：
--
作者：
Fang, GJ;Li, DJ;Yao, BL
以高导电性ZnO（ZnAl2O4）为陶瓷靶材，在玻璃片衬底上制备了c轴取向透明导电ZnO:Al2O3 （ZAO）薄膜。采用直流平面磁控溅射。采用多种技术表征了薄膜（在不同温度下沉积，在400℃真空中退火）的结构、电学和光学性能。实验结果表明，在320℃下沉积的薄膜电阻率为2.67 × 10(-4) ω cm，在10(-5)Torr的真空压力下，在400℃下退火2 h，电阻率可进一步降低至1.5 × 10(-4) ω cm。室温下沉积的ZAO薄膜具有片状晶，平均晶粒尺寸约为100 nm；而在320°c下沉积的则是四面体晶粒，平均晶粒尺寸为150 nm。通过提高沉积温度或沉积后真空退火，ZAO薄膜载流子浓度增加，透射光谱中的吸收边向短波长侧偏移（蓝移）。(C) 2002 Elsevier Science B.V.版权所有
Using a highly conductive ZnO(ZnAl2O4) ceramic target, c-axis-oriented transparent conductive ZnO:Al2O3 (ZAO) thin films were prepared on glass sheet substrates. by direct current planar magnetron sputtering. The structural, electrical and optical properties of the films (deposited at different temperatures and annealed at 400degreesC in vacuum) were characterized with several techniques. The experimental results show that the electrical resistivity of films deposited at 320degreesC is 2.67 x 10(-4) Omega cm and can be further reduced to as low as 1.5 x 10(-4) Omega cm by annealing at 400degreesC for 2 h in a vacuum pressure of 10(-5) Torr. ZAO thin films deposited at room temperature have flaky crystallites with an average grain size of similar to 100 nm; however those deposited at 320degreesC have tetrahedron grains with an average grain size of 150 nm. By increasing the deposition temperature or the post-deposition vacuum annealing, the carrier concentration of ZAO thin films increases, and the absorption edge in the transmission spectra shifts toward the shorter wavelength side (blue shift). (C) 2002 Elsevier Science B.V. All rights reserved.