Heterogeneous Solid Carbon Source-Assisted Growth of High-Quality Graphene via CVD at Low Temperatures
Heterogeneous Solid Carbon Source-Assisted Growth of High-Quality Graphene via CVD at Low Temperatures
复制标题
DOI：
10.1002/adfm.201504194
复制
发表时间：
2016-01-26
影响因子：
19
通讯作者：
Cho, Kilwon
中科院分区：
文献类型：
--
作者：
Lee, Eunho;Lee, Hyo Chan;Cho, Kilwon
多环芳烃（PAH）作为固体碳源已被广泛用于低温合成石墨烯。然而，不可避免的结构缺陷的形成显著限制了合成石墨烯的质量。本文描述了一种低温化学气相沉积方法，该方法有效地减轻了在Cu衬底上通过含有芳香族和脂肪族碳的混合物的非均相固体碳源在石墨烯中形成的缺陷。在PAH中加入少量的脂肪族碳源，通过将小的脂肪族碳片段引入到缺陷位点中，显著降低了在400 T 600 ℃下合成的石墨烯的缺陷密度。使用这种异质固体碳源生长的石墨烯的载流子迁移率是仅使用PAH合成的石墨烯的五倍以上。还提出了两种机制，其中空位可以产生在石墨烯生长过程中使用PAH源铜，缺陷的产生，由于无序包装和PAH分子的几何限制。这种合成石墨烯的低温方法使用非均相固体碳源降低了缺陷密度的程度，有望在电子应用中提供广泛的实用性。
Polycyclic aromatic hydrocarbons (PAH) have been widely used as solid carbon sources for the synthesis of graphene at low temperatures. The inevitable formation of structural defects, however, has significantly limited the quality of the synthesized graphene. This article describes a low-temperature chemical vapor deposition method that effectively mitigates defect formation in graphene by heterogeneous solid carbon sources containing a mixture of aromatic and aliphatic carbon on a Cu substrate. The addition of small amount of aliphatic carbon sources to the PAH significantly decreases the defect density of graphene synthesized at 400 T 600 degrees C by incorporating small aliphatic carbon fragments into defect sites. The carrier mobility of graphene grown using this heterogeneous solid carbon source is more than five times that of graphene synthesized using only PAH. Two mechanisms are also proposed by which vacancies can be generated during graphene growth using PAH sources on Cu, defect generation due to the disordered packing and the geometric limitation of PAH molecules. This low-temperature method of synthesizing graphene reduces the degree of defect density using heterogeneous solid carbon sources promises to provide wide utility in electronics applications.