Nanowire-to-Nanoribbon Conversion in Transition-Metal Chalcogenides: Implications for One-Dimensional Electronics and Optoelectronics
Nanowire-to-Nanoribbon Conversion in Transition-Metal Chalcogenides: Implications for One-Dimensional Electronics and Optoelectronics
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DOI：
10.1021/acsanm.1c03160
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发表时间：
2021-12-16
影响因子：
5.9
通讯作者：
Miyata, Yasumitsu
中科院分区：
文献类型：
--
作者：
Lim, Hong En;Liu, Zheng;Miyata, Yasumitsu
一维过渡金属二卤化物(TMDC)纳米带中占主导地位的量子限制和边缘效应已经产生了在电子、光电子和催化应用中有用的物理性质。已经开发了许多通过自上而下或自下而上的方法来合成TMDC纳米带的方法。然而，控制这些材料的大规模增长仍然具有挑战性。在此，我们描述了使用WTE原子线作为模板前驱体的Z字型TMDC纳米带的预定义生长。在硫化物蒸气存在的情况下对WTE线束进行热处理，以诱导结构转变为层状WS2、WSe2或WTe2的纳米带。根据WTE导线的堆叠排列，可以产生垂直或水平排列的纳米带，形成随机或单向的网络。得到的WSe2纳米带在拉曼和光电流测量中表现出各向异性的光学响应，这表明了它们的一维性质。这些结果不仅为TMDC纳米带的结构工程提供了可能，也为其在复杂的一维电子和光电子器件中的应用提供了可能的途径。
The dominant quantum confinement and edge effects in one-dimensional (1D) transition-metal dichalcogenide (TMDC) nanoribbons have given rise to physical properties useful in electronic, optoelectronic, and catalytic applications. Numerous methods of synthesizing TMDC nanoribbons via top-down or bottom-up methods have already been developed. However, controlling the mass growth of these materials remains challenging. We herein describe a predefined growth of zigzag-type TMDC nanoribbons using WTe atomic wires as template precursors. Bundles of WTe wires were annealed in the presence of chalcogen vapors to induce structural transformation into nanoribbons of layered WS2, WSe2, or WTe2. Depending on the stacking arrangement of the WTe wires, vertically or horizontally aligned nanoribbons were generated, forming random or unidirectional networks. The resultant WSe2 nanoribbons showed anisotropic optical responses in Raman and photocurrent measurements, indicating their 1D nature. The present results provide a path for not only the possible structural engineering of TMDC nanoribbons but also their application in sophisticated 1D electronic and optoelectronic devices.