Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering
Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering
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DOI：
10.1007/s003390000691
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发表时间：
2001-08
期刊：
影响因子：
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通讯作者：
H. Nie;S. Xu;Shijie Wang;L. You;Zhihong Yang;C. Ong;Jing Li;T. Liew
中科院分区：
文献类型：
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作者：
H. Nie;S. Xu;Shijie Wang;L. You;Zhihong Yang;C. Ong;Jing Li;T. Liew
在[FeN/TaN]多层材料中，TaN薄膜是一种极具吸引力的中间层和扩散势垒层，可作为高密度磁记录中潜在的写头材料。在不同的n2分压和5 mtorr的Ar/ n2加工压力下，采用反应性射频溅射技术在玻璃和Si衬底上合成了两种系列的TaN薄膜，并对薄膜进行了系统的表征分析。我们观察到，当n2分压从0.0%增加到30%时，薄膜中的相发生了明显的变化，从金属ccta到bccta (N)和六方Ta2N的混合物，然后依次变为fcctan和富N的TaN混合物。这些变化与薄膜晶粒形状的变化以及从bccta[100]到[110]，再到随机，最后到fccta[111]的首选晶体取向的变化有关。在77-295 K范围内，它们还与薄膜电阻率从金属到半导体的变化有关。薄膜具有典型的多晶织构结构，具有小的结晶域和不规则的晶粒形状。在薄膜中观察到与衬底表面平行的具有嵌入非晶区域的清晰优选（111）堆叠。在25% n2分压下获得了[111]择优取向的TaN膜，其电阻率为6.0 mΩ cm，可用于[FeN/TaN]n多层膜的中间层。
TaN thin film is an attractive interlayer as well as a diffusion barrier layer in [FeN/TaN]nmultilayers for the application as potential write-head materials in high-density magnetic recording. We synthesized two series of TaN films on glass and Si substrates by using reactive radio-frequency sputtering under 5-mtorr Ar/N2processing pressure with varied N2partial pressure, and carried out systematic characterization analyses of the films. We observed clear changes of phases in the films from metallicbccTa to a mixture ofbccTa(N) and hexagonal Ta2N, then sequentially tofccTaN and a mixture of TaN with N-rich phases when the N2partial pressure increased from 0.0% to 30%. The changes were associated with changes in the grain shapes as well as in the preferred crystalline orientation of the films frombccTa [100] to [110], then to random and finally tofccTaN [111], correspondingly. They were also associated with a change in film resistivity from metallic to semiconductor-like behavior in the range of 77–295 K. The films showed a typical polycrystalline textured structure with small, crystallized domains and irregular grain shapes. Clear preferred (111) stacks parallel to the substrate surface with embedded amorphous regions were observed in the film. TaN film with [111]-preferred orientation and a resistivity of 6.0 mΩ cm was obtained at 25% N2partial pressure, which may be suitable for the interlayer in [FeN/TaN]nmultilayers.