Viscous magnetoresistance of correlated electron liquids
Viscous magnetoresistance of correlated electron liquids
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相关电子液体的粘性磁阻
DOI：
10.1103/physrevb.95.121301
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发表时间：
2016
影响因子：
3.7
通讯作者：
A. Andreev
中科院分区：
文献类型：
--
作者：
A. Levchenko;Hong;A. Andreev
本文发展了一个在流体力学体系中的光滑无序势中二维电子系统的磁电阻理论。我们的理论适用于强关联载流子的二维半导体结构时，由于电子-电子碰撞的平均自由程是足够短。磁电阻的主要贡献来自于洛伦兹力对流型的修改，而不是电子液体的动力学系数的磁场依赖性。由此产生的磁阻是积极的和二次在弱磁场。虽然电阻率由电子流体的粘度和热导率两者控制，但磁阻仅由粘度控制。这使得能够从磁输运测量中提取电子液体的粘度。
We develop a theory of magnetoresistance of two-dimensional electron systems in a smooth disorder potential in the hydrodynamic regime. Our theory applies to two-dimensional semiconductor structures with strongly correlated carriers when the mean free path due to electron-electron collisions is sufficiently short. The dominant contribution to magnetoresistance arises from the modification of the flow pattern by the Lorentz force, rather than the magnetic field dependence of the kinetic coefficients of the electron liquid. The resulting magnetoresistance is positive and quadratic at weak fields. Although the resistivity is governed by both viscosity and thermal conductivity of the electron fluid, the magnetoresistance is controlled by the viscosity only. This enables extraction of viscosity of the electron liquid from magnetotransport measurements.