Electron-hole interaction energy in the organic molecular semiconductor PTCDA
Electron-hole interaction energy in the organic molecular semiconductor PTCDA
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DOI：
10.1016/s0009-2614(97)00481-8
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发表时间：
1997-06-20
影响因子：
2.8
通讯作者：
Kahn, A
中科院分区：
文献类型：
--
作者：
Wu, CI;Hirose, Y;Kahn, A
利用光电子能谱、反向光电子能谱和电子能量损失谱，测定了有机分子半导体3，4，9，10-二萘嵌苯四甲酸二酐（PTCDA）中的电子-空穴相互作用能Ee-h。发现Ec-h为1.0+/-0.2eV，大于估计小于0.4eV的PTCDA带宽。因此，PTCDA中的相关效应是重要的，与固体的分子性质一致。由于分子堆叠中重叠分子之间的强π电子耦合，它们小于纯分子固体如C-60。(C)1997年Elsevier Science B.V.
We have used photoemission, inverse photoemission and electron energy loss spectroscopies to determine the on-site attractive electron-hole interaction energy Ee-h in the organic molecular semiconductor 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA). Ec-h is found to be 1.0+/-0.2 eV, larger than the PTCDA band width estimated to be smaller than 0.4 eV. Correlation effects in PTCDA are therefore important, consistent with the molecular nature of the solid, They are smaller than in purely molecular solids like C-60 due to the strong pi-electron coupling between overlapping molecules in the molecular stacks. (C) 1997 Elsevier Science B.V.