FABRICATION AND STIMULATED EMISSION OF ER-DOPED NANOCRYSTALLINE SI WAVEGUIDES FORMED ON SI SUBSTRATES BY LASER ABLATION
FABRICATION AND STIMULATED EMISSION OF ER-DOPED NANOCRYSTALLINE SI WAVEGUIDES FORMED ON SI SUBSTRATES BY LASER ABLATION
复制标题
通过激光烧蚀在 SI 衬底上形成的掺铒纳米晶 SI 波导的制造和受激发射
DOI：
10.1063/1.122970
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发表时间：
1999
影响因子：
4
通讯作者：
T. Sugano
中科院分区：
文献类型：
--
作者：
Xinwei Zhao;S. Komuro;H. Isshiki;Y. Aoyagi;T. Sugano
在Si衬底上制备了掺Er纳米晶Si（nc-Si）光波导，并利用光抽运对其进行了研究。在室温下，在1540 nm处的受激发射被证明。所制备的掺铒nc-Si光波导的尺寸为5000 nm×200 nm×L，L为腔长，在1 ~ 10 mm范围内变化，当长度大于3 mm时，在1540 nm处观察到超线性光输出，光输出的受激发射阈值为10 MW/cm 2，并且被证明取决于波导的腔长。当泵浦功率密度超过阈值时，掺铒nc-Si波导解理面光输出的衰减寿命大大缩短，这表明受激发射导致Er ~（3+）离子中4f内电子跃迁几率增加。通过优化器件结构和提高泵浦功率密度，可以获得较好的1540 nm激光性能和较低的泵浦功率密度。
Er-doped nanocrystalline Si (nc-Si) waveguides were fabricated on Si substrates and investigated by optical pumping. A stimulated emission at 1540 nm was demonstrated at room temperature. The sizes of the fabricated Er-doped nc-Si waveguides were 5000 nm×200 nm×L, where L is the cavity length and is changed from 1 to 10 mm. Superlinear optical outputs at 1540 nm were observed for the waveguides longer than 3 mm. The threshold of the optical output where the stimulated emission occurs is in the order of 10 MW/cm2, and is demonstrated to depend on the cavity length of the waveguides. A large reduction of decay lifetimes of the light output from a cleavage facet of the Er-doped nc-Si waveguides was observed when the pumping power density exceeded the thresholds indicating an increase of transition probabilities in intra-4f electrons in Er3+ ions caused by the stimulated emission. Better 1540 nm laser performance and lower pumping power density should be obtained by optimizing the device structure and increas...