Thermal robustness evaluation of nonvolatile memory using Pt nanogaps
Thermal robustness evaluation of nonvolatile memory using Pt nanogaps
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DOI：
10.7567/apex.11.085202
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发表时间：
2018-07
影响因子：
2.3
通讯作者：
Y. Naitoh;H. Suga;T. Abe;Kazuki Otsu;Y. Umeta;T. Sumiya;H. Shima;K. Tsukagoshi;H. Akinaga
中科院分区：
文献类型：
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作者：
Y. Naitoh;H. Suga;T. Abe;Kazuki Otsu;Y. Umeta;T. Sumiya;H. Shima;K. Tsukagoshi;H. Akinaga
我们研究了使用多晶铂（Pt）纳米间隙电极的非易失性存储器的热鲁棒性。从室温到773 K，测量了电阻态的温度依赖性.在高温下，高阻态（HRS）的电阻随温度变化而略有变化。这种轻微的变化可以忽略不计，通过在纳米间隙下蚀刻SiO2层来改善热鲁棒性。这表明热蚀变是由通过SiO2层的电流泄漏引起的。采用Pt纳米间隙的非易失性存储器有望作为高达773 K的热鲁棒存储器。
We investigated the thermal robustness of a nonvolatile memory using polycrystalline platinum (Pt) nanogap electrodes. The temperature dependences of resistance states were evaluated from room temperature to 773 K. At high temperatures, the resistance of the high-resistance state (HRS) was slightly altered as the temperature changed. This slight alteration could be neglected, and the thermal robustness was improved by etching a SiO2 layer just under the nanogap. This indicated that the thermal alteration was caused by current leakage through the SiO2 layer. The nonvolatile memory employing Pt nanogaps is expected to be potentially useful as a thermally robust memory up to 773 K.