Intermediate Amorphous Layer Formation Mechanism at the Interface of Epitaxial CeO2 Layers and Si Substrates
Intermediate Amorphous Layer Formation Mechanism at the Interface of Epitaxial CeO2 Layers and Si Substrates
复制标题
CeO2外延层与Si衬底界面中间非晶层形成机制
DOI：
10.1143/jjap.32.1765
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
Y. Sakurai
中科院分区：
文献类型：
--
作者：
Tomoyasu Inoue;T. Ohsuna;Yasuhiro Obara;Yasuhiro Yamamoto;M. Satoh;Y. Sakurai
利用截面透射电子显微镜和俄歇电子能谱研究了外延生长的 CeO2 层和硅衬底之间的中间非晶层的形成机制。在空气中800℃退火后，中间非晶层厚度增加，而在超高真空中退火后，中间非晶层厚度有所减小。俄歇深入分析证实中间非晶层是二氧化硅。分析了在干氧环境下700∼900°C下有意氧化引起的CeO2/Si结构的中间氧化物生长，结果表明氧化在反应限制过程和扩散限制过程之间的中间步骤中进行。中间非晶层的形成机制被认为是氧通过CeO2 层的扩散和硅在界面处的连续氧化。
The formation mechanism of an intermediate amorphous layer between epitaxially grown CeO2 layers and silicon substrates is studied using cross-sectional transmission electron microscopy and Auger electron spectroscopy. The intermediate amorphous layer thickness increases after annealing at 800°C in air, whereas it decreases somewhat after annealing in an ultrahigh vacuum. Auger in-depth analysis verifies that the intermediate amorphous layer is silicon dioxide. The intermediate oxide growth of the CeO2/Si structures due to intentional oxidation at 700∼900°C in a dry oxygen ambient is analyzed and the results indicate that the oxidation proceeds in an intermediate step between reaction limited and diffusion limited processes. The intermediate amorphous layer formation mechanism is concluded to be oxygen diffusion through CeO2 layers and successive oxidation of silicon at the interface.