Effect of flux ratio on GaSb films grown at a low temperature on Si(111)
Effect of flux ratio on GaSb films grown at a low temperature on Si(111)
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通量比对Si(111)上低温生长GaSb薄膜的影响
DOI：
10.1109/iciev.2019.8858576
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
Koihci Maezawa
中科院分区：
文献类型：
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作者：
A. A. Md. Monzur-Ul-Akhir;Masayuki Mori;Koihci Maezawa
由于孪晶的生长，研究人员面临着在硅(Si)和锗(Ge)等衬底上沉积单晶III-V化合物半导体薄膜的挑战。本研究主要研究了Sb(Sb)与Ga(Ga)的流量比在Si衬底上制备GaSb薄膜的工艺条件。在这项研究中，我们试图找出不同的Sb/Ga流量比，即富Ga、富Sb和Sb/Ga比为1的条件下GaSb的结晶性质。通过X射线衍射φ扫描图谱的测量，我们发现富Sb条件有利于生长高质量的(HQ)薄膜，而富Ga条件有利于生长出岛状图案的薄膜。我们观察到，对于两步生长法，如果在低衬底温度和低生长速率下生长GaSb薄膜的第一层缓冲层，则无论在较高的衬底温度下沉积第二层的Sb/Ga流量比，都可以沉积出单晶GaSb薄膜。
Researchers face the challenge of depositing single-crystalline III-V compound semiconductor films on substrates like Silicon (Si) and Germanium due to the twin crystal growth. This investigation focuses on the Sb(Antimony) to Gallium(Ga) flux ratio to generate a GaSb film which is one of the III-V compound semiconductors on Si. In this study, we have tried to find out the GaSb crystalline nature in response to varied Sb to Ga flux ratio that is Ga-rich, Sb-rich and Sb to Ga Ratio-one conditions. With the XRD φ-scan pattern measurement, we found Sb-rich condition is useful in growing a High-Quality (HQ) film whereas Ga-rich condition grows an island patterned film. We observed that for a two-step growth method, if the growth of the 1stor buffer layer of GaSb films is performed at a low substrate temperature and a low growth rate, a single-crystalline GaSb film is deposited irrespective of Sb to Ga flux ratio where the 2ndlayer was deposited at a high substrate temperature.