Optical near-field excitation at the semiconductor band edge: Field distributions, anisotropic transitions and quadrupole enhancement
Optical near-field excitation at the semiconductor band edge: Field distributions, anisotropic transitions and quadrupole enhancement
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DOI：
10.1063/1.481387
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发表时间：
2000-05-08
影响因子：
4.4
通讯作者：
Koch, SW
中科院分区：
文献类型：
--
作者：
von der Heydt, A;Knorr, A;Koch, SW
利用麦克斯韦方程和激子方程的时域有限差分格式，分析了三维亚波长口径半导体系统的光学近场响应。分析包括由于高折射率环境引起的场修正和近场分布的激子响应。给出了量子阱中各向异性偶极跃迁的共振光学响应，以及偶极禁带跃迁材料中四极跃迁的增强效应。(C)2000年美国物理研究所。[S0021-9606(00)70716-1]。
The optical near-field response of a three dimensional subwavelength aperture-semiconductor system is analyzed within a finite difference time domain scheme for Maxwell's and excitonic material equations. The analysis includes the field modification due to the high refractive index environment and the excitonic response to a near-field distribution. The resonant optical response is illustrated for anisotropic dipole transitions in quantum wells and the enhancement of the quadrupole transition in materials with dipole forbidden interband transitions. (C) 2000 American Institute of Physics. [S0021-9606(00)70716-1].