Enhanced thermoelectric properties of Cu doped ZnSb based thin films
Enhanced thermoelectric properties of Cu doped ZnSb based thin films
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DOI：
10.1016/j.jallcom.2016.01.207
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发表时间：
2016-05
影响因子：
6.2
通讯作者：
Zhuang‐hao Zheng;P. Fan;Jingting Luo;G. Liang;Peng-juan Liu;Dong-ping Zhang
中科院分区：
文献类型：
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作者：
Zhuang‐hao Zheng;P. Fan;Jingting Luo;G. Liang;Peng-juan Liu;Dong-ping Zhang
采用直流磁控管共溅射技术沉积了 Cu 掺杂 ZnSb 基薄膜。 X射线衍射结果表明，未掺杂的薄膜为单一ZnSb相，掺杂Cu后转变为Zn4Sb3相。 Zn4Sb3相材料属于R-3c空间群晶体，会导致导热系数较低。霍尔效应测量表明样品为P型半导体。 Cu掺杂后，由于载流子浓度的增加和结晶度的改善，电导率增加。 Cu掺杂后虽然塞贝克系数降低，但ZT值从0.11增加到0.43，室温下电导率更高，导热率更低。通过使用体晶格热导率和薄膜电热导率，Zn4Sb3 相薄膜的 ZT 值与温度的关系估计为 ∼1.35。
Cu doped ZnSb based thin films were deposited by direct current magnetron co-sputtering. X-ray diffraction results show that the un-doped thin film reveals a single ZnSb phase and it transforms to Zn4Sb3phase after Cu doped. The material with Zn4Sb3phase which belongs to R-3c space group crystal will lead to lower thermal conductivity. The Hall effect measurement shows that the samples are P-type semiconductors. The electrical conductivity increasers after Cu doped due to the increase of carrier concentration and the improvement in crystallinity. Though the Seebeck coefficient decreases after Cu doped, the ZT value increases from 0.11 to 0.43 with higher electrical conductivity and lower thermal conductivity at room-temperature. The temperature-dependent of ZT value is estimated to be ∼1.35 for the thin film with Zn4Sb3phase by using the bulk lattice thermal conductivity together with the thin film electrical thermal conductivity.