High quantum efficiency InGaN/GaN structures emitting at 540 nm
High quantum efficiency InGaN/GaN structures emitting at 540 nm
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DOI：
10.1002/pssc.200565252
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发表时间：
2006-06
期刊：
影响因子：
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通讯作者：
D. Graham;P. Dawson;M. J. Godfrey;M. Kappers;P. Costa;M. E. Vickers;R. Datta;C. Humphreys;E. Thrush
中科院分区：
文献类型：
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作者：
D. Graham;P. Dawson;M. J. Godfrey;M. Kappers;P. Costa;M. E. Vickers;R. Datta;C. Humphreys;E. Thrush
我们对一系列 InGaN/GaN 多量子阱结构的光学特性进行了研究，室温峰值发射波长为 540 nm。通过采用两温生长方法并设计具有短辐射寿命的结构，我们获得了8%的室温内部光致发光量子效率。透射电子显微镜图像揭示了多量子阱堆叠中存在边缘型螺纹失配位错，这可能会阻碍效率达到在蓝色发光 InGaN/GaN 多量子阱结构中获得的非常高的值。 （© 2006 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
We present a study of the optical properties of a series of InGaN/GaN multiple quantum well structures, with room temperature peak emission wavelengths of 540 nm. By adopting a two-temperature growth method and designing structures to have short radiative lifetimes, we have obtained room temperature internal photoluminescence quantum efficiencies of 8%. Transmission electron microscopy images have revealed the presence of edge-type threading misfit dislocations in the multiple quantum well stack, which may be preventing the efficiency from reaching the very high values obtained in blue emitting InGaN/GaN multiple quantum well structures. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)