A theoretical study of resonant cavity‐enhanced photodectectors with Ge and Si active regions
A theoretical study of resonant cavity‐enhanced photodectectors with Ge and Si active regions
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DOI：
10.1063/1.350829
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发表时间：
1992-04
影响因子：
3.2
通讯作者：
M. Ünlü;K. Kishino;H. Liaw;H. Morkoç
中科院分区：
文献类型：
--
作者：
M. Ünlü;K. Kishino;H. Liaw;H. Morkoç
在可见光到1.55 μm波长范围内的光学探测器中考虑了Ge或Si与化合物半导体的集成。锗和硅都是间接带隙材料，吸收系数相对较小，但载流子寿命很长。利用大带隙化合物半导体反射镜在锗和硅有源层周围形成谐振腔，可以实现薄（<0.5 μm）吸收层的高光敏性。讨论并比较了两种不同的计算谐振腔增强探测器光敏度的方法。分析了驻波效应及其对空腔参数的依赖关系。提出了这种谐振腔增强光电探测器的设计原则。从理论上研究了一些实现高量子效率和波长选择性的器件设计的光谱响应。
An integration of Ge or Si with compound semiconductors is considered for optical detectors at wavelengths ranging from the visible to 1.55 μm. Both Ge and Si are indirect band gap materials with relatively small absorption coefficients but very long carrier lifetimes. Using a resonant cavity formed by large band gap compound semiconductor mirrors surrounding Ge and Si active layers, high photosensitivity for thin (<0.5 μm) absorbing layers can be achieved. Two different methods are discussed and compared for the calculation of the photosensitivity of resonant cavity enhanced detectors. The standing wave effect and its dependence on cavity parameters are analyzed. Design rules for such resonant cavity enhanced photodetectors are presented. The spectral response of some device designs to achieve high quantum efficiency and wavelength selectivity has also been theoretically investigated.