Surface micromachined solenoid on-Si and on-glass inductors for RF applications
Surface micromachined solenoid on-Si and on-glass inductors for RF applications
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DOI：
10.1109/55.784461
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发表时间：
1999-09-01
影响因子：
4.9
通讯作者：
Kim, CK
中科院分区：
文献类型：
--
作者：
Yoon, JB;Kim, BK;Kim, CK
在标准硅衬底上制造的表面微机械螺线管片上电感器的射频性能(10 ω。结果表明，采用绝缘层厚度为15 μ m的硅基电磁电感在2.4 GHz下的峰值质量因子（Q-）为16.7，电感值为2.67 nH，约为玻璃基电磁电感的三分之二。采用集总电路对硅基和玻璃基电感进行了建模，并研究了电感和q -因子的几何关系。结果表明，硅基和玻璃基电感的几何关系与q -因子的几何关系密切。
RF performance of surface micromachined solenoid on-chip inductors fabricated on a standard silicon substrate (10 Omega. cm) has been investigated and the results are compared with the same inductors on glass, The solenoid inductor on Si with a 15-mu m thick insulating layer achieves peak quality (Q-) factor of 16.7 at 2.4 GHz with inductance of 2.67 nH, This peak Q-factor is about two-thirds of that of the same inductor fabricated on glass. The highest performance has been obtained from the narrowest-pitched on-glass inductor, which shows inductance of 2.3 nH, peak Q-factor of 25.1 at 8.4 GHz, and spatial inductance density of 30 nH/mm(2), Both on-Si and on-glass inductors have been modeled by lumped circuits, and the geometrical dependence of the inductance and Q-factor have been investigated as well.