Drain-induced barrier lowering in normally-off AlGaN-GaN MOSFETs with single- or double-recess overlapped gate
Drain-induced barrier lowering in normally-off AlGaN-GaN MOSFETs with single- or double-recess overlapped gate
复制标题
具有单凹槽或双凹槽重叠栅极的常关 AlGaN-GaN MOSFET 中的漏极感应势垒降低
DOI：
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复制
发表时间：
2017
期刊：
影响因子：
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通讯作者：
and T. Suzuki
中科院分区：
文献类型：
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作者：
T. Sato;K. Uryu;J. Okayasu;M. Kimishima;and T. Suzuki
