Type conversion in CdxHg1-xTe by ion beam treatment
Type conversion in CdxHg1-xTe by ion beam treatment
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DOI:
10.1049/el:19870687
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发表时间:
1987-09
影响因子:
1.1
通讯作者:
M. Blackman;D. Charlton;M. D. Jenner;D. Purdy;J. Wotherspoon;C. T. Elliott;A. White
中科院分区:
文献类型:
--
作者:
M. Blackman;D. Charlton;M. D. Jenner;D. Purdy;J. Wotherspoon;C. T. Elliott;A. White
Conversion of vacancy-doped p-type cadmium mercury telluride to n-type by rapid diffusion of mercury interstitials created during ion bombardment is rate-limited by the dose and requires neither donor ions nor postannealing.