Development of far-infrared Ge:Ga photoconductor having a longitudinal configuration
Development of far-infrared Ge:Ga photoconductor having a longitudinal configuration
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具有纵向结构的远红外Ge:Ga光电导体的开发
DOI：
10.1063/1.1323742
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发表时间：
2000
影响因子：
4
通讯作者：
M. Fujiwara
中科院分区：
文献类型：
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作者：
M. Fujiwara
为了有效地获得 3 THz 范围内的二维 (2D) 图像，开发 2D 远红外探测器阵列非常重要。我们开发了一种具有纵向结构的掺镓锗（Ge:Ga）远红外光电导体。该结构适用于大尺寸单片二维阵列。在这封信中，我们表明可以通过离子注入形成在远红外范围内响应的透明电极，并且该层有助于提高量子效率。通过离子注入层和Ge:Ga体材料的组合，我们获得了纵向配置的Ge:Ga光电导体的高响应度（16.2 A/W）和良好的噪声等效功率（2.6×10−17 W/Hz1/2）。
In order to efficiency obtain a two-dimensional (2D) image in the 3 THz range, it is important to develop a 2D far-infrared detector array. We have developed a gallium-doped germanium (Ge:Ga) far-infrared photoconductor that has a longitudinal configuration. This structure is suitable for a large format monolithic 2D array. In this letter, we show that a transparent electrode that is responsive in the far-infrared range can be formed by ion implantation, and this layer contributed to increasing quantum efficiency. We obtained a high responsivity (16.2 A/W) and good noise equivalent power (2.6×10−17 W/Hz1/2) of Ge:Ga photoconductor in longitudinal configuration by combination of ion-implanted layers and Ge:Ga bulk material.