FABRICATION OF 5-7 NM WIDE ETCHED LINES IN SILICON USING 100 KEV ELECTRON-BEAM LITHOGRAPHY AND POLYMETHYLMETHACRYLATE RESIST
FABRICATION OF 5-7 NM WIDE ETCHED LINES IN SILICON USING 100 KEV ELECTRON-BEAM LITHOGRAPHY AND POLYMETHYLMETHACRYLATE RESIST
复制标题
DOI：
10.1063/1.109609
复制
发表时间：
1993-03-29
影响因子：
4
通讯作者：
AHMED, H
中科院分区：
文献类型：
--
作者：
CHEN, W;AHMED, H
目前，硅基板上使用聚甲基丙烯酸甲酯 (PMMA) 抗蚀剂通过电子束光刻技术制造的线宽约为 10 nm 的限制已被克服。已经在块状硅衬底上产生了 5-7 nm 宽的蚀刻线。将 65 nm 厚的 PMMA 层用直径小于 5 μm 的 80 kV 电子束曝光。曝光后，抗蚀剂在 3:7 溶纤剂:甲醇中超声搅拌下显影。通过反应离子蚀刻将抗蚀剂中的图案转移到硅基板上。使用分辨率为 0.7 nm 的 S-900 扫描电子显微镜记录宽度在 5 至 7 nm 之间变化的线。
The present limit of around 10 nm for the width of lines fabricated by e-beam lithography using polymethylmethacrylate (PMMA) resist on silicon substrates has been overcome. 5-7 nm wide etched lines in bulk Si substrates have been produced. A 65 nm thick layer of PMMA was exposed with an 80 kV electron beam of diameter smaller than 5 mum. After exposure the resist was developed in 3:7 cellosolve:methanol with ultrasonic agitation. The pattern in resist was transferred to the Si substrate with reactive ion etching. Lines of width varying between 5 and 7 nm were recorded using an S-900 scanning electron microscope which has a resolution of 0.7 nm.