In-plane conductance measurement of graphene nanoislands using an integrated nanogap probe
In-plane conductance measurement of graphene nanoislands using an integrated nanogap probe
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DOI：
10.1088/0957-4484/19/49/495701
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发表时间：
2008-12-10
期刊：
影响因子：
3.5
通讯作者：
Yamaguchi, H.
中科院分区：
文献类型：
--
作者：
Nagase, M.;Hibino, H.;Yamaguchi, H.
在SiC衬底上热生长的单个石墨烯纳米岛的面内电导成功地测量使用集成的纳米间隙探针没有光刻图案化。一个Pt纳米间隙电极与30 nm的间隙集成在一个扫描探针显微镜的悬臂梁尖端，使我们能够以纳米分辨率成像的石墨烯纳米岛的电导图。单层和双层石墨烯岛在电导图像中清楚地区分开。纳米岛的电导的尺寸依赖性表明，带隙开放是由于横向限制效应。
The in-plane conductance of individual graphene nanoislands thermally grown on SiC substrate was successfully measured using an integrated nanogap probe without lithographic patterning. A Pt nanogap electrode with a 30 nm gap integrated on the cantilever tip of a scanning probe microscope enables us to image a conductance map of graphene nanoislands with nanometer resolution. Single- and double-layer graphene islands are clearly distinguished in the conductance image. The size dependence of the conductance of the nanoislands suggests that the band gap opening is due to the lateral confinement effect.