Ultra-high breakdown high-performance AlInAs/GaInAs/InP power HEMTs
Ultra-high breakdown high-performance AlInAs/GaInAs/InP power HEMTs
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超高击穿高性能 AlInAs/GaInAs/InP 功率 HEMT
DOI：
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发表时间：
1993
期刊：
影响因子：
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通讯作者：
M. Thompson
中科院分区：
文献类型：
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作者：
M. Matloubian;L. Jelloian;M. Lui;T. Liu;M. Thompson
在本文中，我们报告了高性能 InP 基 HEMT 的创纪录击穿电压。对于500 ym宽的InP基HEMT，栅极长度为0.25 /spl mu/m，漏极到源极间距为5 /spl mu/m，我们获得了高达59 V的栅极到漏极击穿电压（在1 mA/mm栅极电流下测量）。这是 InP 基 HEMT 有史以来达到的最高击穿电压。对于具有 2/spl mu/m 漏源间距的 50X0.25 /spl mu/m/sup 2/ 器件，典型栅漏击穿电压超过 30V，电流密度为 520mA/mm，最大跨导超过 570mS/mm。这是迄今为止所报道的任何类型 FET 中击穿电压、电流密度和跨导的最高组合。<<ETX>>
In this paper we report on record breakdown voltages for high-performance InP-based HEMTs. We have obtained gate-to-drain breakdown voltages of as high as 59 V (measured at 1 mA/mm of gate current) for a 500 ym wide InP-based HEMT with a gate-length of 0.25 /spl mu/m and drain-to-source spacing of 5 /spl mu/m. This is the highest breakdown voltage ever achieved for an InP-based HEMT. For a 50X0.25 /spl mu/m/sup 2/ device with a 2/spl mu/m drain-to-source spacing the typical gate-to-drain breakdown voltage is over 30 V with a current density of 520 mA/mm and a maximum transconductance of more than 570 mS/mm. This is the highest combination of breakdown voltage, current density, and transconductance ever reported for any type of FET.<<ETX>>