Suppression of Host Luminescence in the Pr:LuAG Scintillator
Suppression of Host Luminescence in the Pr:LuAG Scintillator
复制标题
DOI：
10.1109/tns.2008.922820
复制
发表时间：
2008-06
影响因子：
1.8
通讯作者：
H. Ogino;K. Kamada;A. Yoshikawa;F. Saito;J. Pejchal;J. Mares;M. Nikl;A. Vedda;J. Shimoyama;K. Kishio
中科院分区：
文献类型：
--
作者：
H. Ogino;K. Kamada;A. Yoshikawa;F. Saito;J. Pejchal;J. Mares;M. Nikl;A. Vedda;J. Shimoyama;K. Kishio
Effect of Ga substitution in the (Lu,Pr)3Al5O12 (Pr :LuAG) scintillator was examined at the crystals grown by the micropulling down (mu-PD) method. Host luminescence due to an exciton localized around the Lu-Al antisite defect was suppressed by Ga admixture. Concentration dependence was investigated and suppression was observed even at the lowest Ga concentration of 5 mol%. Faster decay time as well as less intense slower components were obtained upon increasing the amount of Ga. In the thermostimulated luminescence measurement, the glow curve peaks are gradually shifted to lower temperatures with the gallium admixture, and noticeable intensity decrease was observed only for the (Lu,Pr)3(Ga0.2Al0.8)5O12. The undesired quenching effect of Ga on the Pr3+ luminescence seems to be reasonably low up to (Lu,Pr)3(Ga0.2Al0.8)5O12 sample. It is estimated to introduce nonradiative losses of less than 10% with respect to Ga-free Pr:LuAG. Bulk crystals were also grown by the Czochralski (Cz) method and these effects were confirmed.
