Sub-5 nm monolayer germanium selenide (GeSe) MOSFETs: towards a high performance and stable device
Sub-5 nm monolayer germanium selenide (GeSe) MOSFETs: towards a high performance and stable device
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亚 5 nm 单层硒化锗 (GeSe) MOSFET：迈向高性能和稳定的器件
DOI：
10.1039/d0nr02170a
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发表时间：
2020-07-28
期刊：
影响因子：
6.7
通讯作者：
Lu, Jing
中科院分区：
文献类型：
--
作者：
Guo, Ying;Pan, Feng;Lu, Jing
二维(2D)黑色磷烯(BP)场效应管(FET)表现出优异的器件性能，但在环境条件下存在严重的不稳定性。等电子二维锗硒化合物(GESE)与二维BP具有许多相似的性质，如高的载流子迁移率和各向异性，但在常温下是稳定的。在这里，我们用第一性原理量子输运模拟方法研究了亚5 nm多层GeSE MOSFET的量子输运特性。P型(之字形导向)装置优于其他类型(n型和p型扶手椅导向和n型之字形导向)。即使在1 nm栅长的情况下，p型器件(之字形定向的)的导通电流也可以满足国际半导体技术路线图(ITRS，2013版)中对未来十年高性能应用的要求。据我们所知，在已报道的2D材料FET中，这些ML Gese MOSFET具有最小的栅长，可以满足ITRS HP导通电流要求。
Two-dimensional (2D) black phosphorene (BP) field-effect transistors (FETs) show excellent device performance but suffer from serious instability under ambient conditions. Isoelectronic 2D germanium selenide (GeSe) shares many similar properties with 2D BP, such as high carrier mobility and anisotropy, but is stable under ambient conditions. Herein, we explore the quantum transport properties of sub-5 nm ML GeSe MOSFETs using first-principles quantum transport simulation. A p-type (zigzag-directed) device is superior to other types (n- and p-type armchair-directed and n-type zigzag-directed). The on-state current of p-type devices (zigzag-directed), even at a 1 nm gate-length, can fulfill the requirements of high-performance applications for the next decade in the International Technology Roadmap for Semiconductors (ITRS, 2013 version). To the best of our knowledge, these ML GeSe MOSFETs have the smallest gate-length that can fulfill the ITRS HP on-state current requirements among reported 2D material FETs.