Modified oxygen vacancy induced Fermi level pinning model extendable to p-metal pinning
Modified oxygen vacancy induced Fermi level pinning model extendable to p-metal pinning
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DOI：
10.1143/jjap.45.l1289
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发表时间：
2006-12-01
期刊：
影响因子：
--
通讯作者：
Nakamura, Kunio
中科院分区：
文献类型：
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作者：
Akasaka, Yasushi;Nakamura, Genji;Nakamura, Kunio
典型的p金属在接近p（+）多晶硅（poly-Si）钉扎位置处显示出类似的有效功函数，而与高温处理后的材料无关。我们发现这种现象可以用考虑了Si衬底影响的修正Vo模型来解释。Si衬底的氧吸收和随后的电子转移到金属电极清楚地解释了p金属费米能级钉扎以及p（+）多晶硅钉扎。此外，通过在p（+）多晶硅/阻挡层/高k栅极堆叠处插入阻挡层的未抑制的费米能级钉扎（这是关于p（+）多晶硅钉扎的公开问题之一）具有相同的总体反应方案。修改后的模型也一致地解释了这一现象。
Typical p-metals show similar effective work functions close to p(+) polycrystalline silicon (poly-Si) pinning position irrespective of materials after high-temperature process. We found that this phenomenon can be explained by the modified Vo model taking into account the effect of Si substrate. Oxygen absorption by Si substrate and subsequent electron transfer to metal electrode clearly explain the p-metal Fermi level pinning as well as p(+) poly-Si pinning. In addition, unsuppressed Fermi level pinning by insertion of barrier layer at p(+) poly-Si/barrier layer/high-k gate stack, which is one of the open issues concerning p(+) poly-Si pinning, has the same overall reaction scheme. The modified model also consistently explains this phenomenon.