Resonant tunneling transport at 300 K in GaAs‐AlGaAs quantum wells grown by metalorganic chemical vapor deposition
Resonant tunneling transport at 300 K in GaAs‐AlGaAs quantum wells grown by metalorganic chemical vapor deposition
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金属有机化学气相沉积生长的 GaAs-AlGaAs 量子阱中 300 K 的共振隧道传输
DOI：
10.1063/1.96849
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发表时间：
1986
影响因子：
4
通讯作者：
J. Williams
中科院分区：
文献类型：
--
作者：
S. Ray;P. Ruden;V. Sokolov;R. Kolbas;T. Boonstra;J. Williams
研究了GaAs-AlGaAs单阱双势垒结构中的共振隧穿输运。在77和300 K的负微分电阻，观察到由金属有机化学气相沉积生长的设备。观察到的峰谷比分别为6：1和1.48：1。发现GaAs间隔层的存在对300 K电流与电压特性具有明显的影响。在300 K下观察到频率高达3.0GHz的微波振荡。我们的结构的振荡频率限制的简短讨论。
Resonant tunneling transport was studied in GaAs‐AlGaAs single well, double barrier structures. Negative differential resistance at 77 and 300 K was observed in devices grown by metalorganic chemical vapor deposition. The observed peak to valley ratios were 6 to 1 and 1.48 to 1, respectively. The presence of GaAs spacer layers was found to have a distinct effect on the 300 K current versus voltage characteristics. Microwave oscillation at frequencies up to 3.0 GHz was observed at 300 K. A short discussion of the oscillation frequency limits of our structure is presented.