High Figure of Merit Magneto‐Optical Ce‐ and Bi‐Substituted Terbium Iron Garnet Films Integrated on Si

High Figure of Merit Magneto‐Optical Ce‐ and Bi‐Substituted Terbium Iron Garnet Films Integrated on Si
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DOI:
10.1002/adom.202100512
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发表时间:
2021-05
影响因子:
9
通讯作者:
Takian Fakhrul;S. Tazlaru;B. Khurana;L. Beran;J. Bauer;Michal Vančík;A. Marchese;Ekaterina Tsotsos;M. Kucera;Yan Zhang;M. Veis;C. Ross
Takian Fakhrul;S. Tazlaru;B. Khurana;L. Beran;J. Bauer;Michal Vančík;A. Marchese;Ekaterina Tsotsos;M. Kucera;Yan Zhang;M. Veis;C. Ross
中科院分区:
材料科学2区
文献类型:
--
作者:
Takian Fakhrul;S. Tazlaru;B. Khurana;L. Beran;J. Bauer;Michal Vančík;A. Marchese;Ekaterina Tsotsos;M. Kucera;Yan Zhang;M. Veis;C. Ross

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通过脉冲激光沉积在Si衬底上生长多晶铽铁石榴石(TbIG)、铈取代的TbIG(CeTbIG)和铋取代的TbIG(BiTbIG)的膜。由于与Si衬底的热失配,薄膜在拉伸应变下生长,导致主导的磁弹性各向异性,其与形状各向异性结合,导致面内磁化。TbIG具有253 K的补偿温度,其通过Ce和Bi的替代而降低。TbIG、Ce 0.36 TbIG和Bi 0.03 TbIG膜在1550 nm处的法拉第旋转分别为5400 ± 600° cm-1、4500 ± 100° cm-1和6200 ± 300° cm-1,而Ce 0.36 TbIG和Bi 0.03 TbIG表现出比TbIG低的光吸收,这归因于Fe 2+和Tb 4+吸收路径的减少。薄膜的高法拉第旋转,特别是Bi 0.03 TbIG在1550 nm处720° dB−1的高磁光品质因数,使这些多晶薄膜在集成光子学中的应用具有价值。
Films of polycrystalline terbium iron garnet (TbIG), cerium‐substituted TbIG (CeTbIG), and bismuth‐substituted TbIG (BiTbIG) are grown on Si substrates by pulsed laser deposition. The films grow under tensile strain due to thermal mismatch with the Si substrate, resulting in a dominant magnetoelastic anisotropy which, combined with shape anisotropy, leads to in‐plane magnetization. TbIG has a compensation temperature of 253 K which is reduced by substitution of Ce and Bi. The Faraday rotation at 1550 nm of the TbIG, Ce0.36TbIG, and Bi0.03TbIG films is 5400 ± 600° cm−1, 4500 ± 100° cm–1, and 6200 ± 300° cm−1, respectively, while Ce0.36TbIG and Bi0.03TbIG exhibit lower optical absorption than TbIG, attributed to a reduction in Fe2+ and Tb4+ absorption pathways. The high Faraday rotation of the films, and in particular the high magneto‐optical figure of merit of the Bi0.03TbIG of 720° dB−1 at 1550 nm, make these polycrystalline films valuable for applications in integrated photonics.