Investigation of Ce-doped Gd2Si2O7 as a scintillator material
Investigation of Ce-doped Gd2Si2O7 as a scintillator material
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Ce掺杂Gd2Si2O7作为闪烁体材料的研究
DOI：
10.1016/j.nima.2007.09.021
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发表时间：
2007
影响因子：
1.4
通讯作者：
M. Furusaka
中科院分区：
文献类型：
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作者：
S. Kawamura;J. Kaneko;M. Higuchi;F. Fujita;Akira Homma;J. Haruna;S. Saeki;K. Kurashige;H. Ishibashi;M. Furusaka
作为一种新型的闪烁材料，研究了Ce掺杂的Gd 2Si 2 O 7的应用。事实上，（Gd 0.9Ce 0.1）2Si 2 O 7粉末对于241 Am的α粒子显示出比Gd 2SiO 5（GSO）单晶高约1.2倍的光输出。此外，还得到了~（241）Am α粒子的快衰变常数为52 ns。并对Ce浓度、晶体结构和发光特性之间的关系进行了分析。结果表明，重Ce掺杂改变了Gd_2Si_2O_7的晶体结构，其发光强度与Ce浓度无关，而与重Ce掺杂形成的三斜结构有关。
As a novel scintillation material, the use of Ce-doped Gd2Si2O7was investigated. In fact, (Gd0.9Ce0.1)2Si2O7powder showed about 1.2 times greater light output than Gd2SiO5(GSO) single crystals for alpha particles of241Am. Furthermore, a fast decay constant of 52ns was obtained for alpha-particles of241Am. Relations between the Ce concentration, crystal structure, and luminescence characteristics were also elucidated. Results of these studies show that heavy Ce doping alters the Gd2Si2O7crystal structure and that the luminescence intensity is dependent not on Ce concentration, but on the triclinic structure formed by heavy Ce doping.
GSO正电子/单光子成像探测器的研制
DOI：
--
发表时间：
2006
期刊：
Physics in Medicine and Biology Vol.51
影响因子：
--
作者：
S.Yamamoto;K.Matsumoto;M.Senda
通讯作者：
M.Senda