Formation of GaP/Si(100) Heterointerfaces in the Presence of Inherent Reactor Residuals.
Formation of GaP/Si(100) Heterointerfaces in the Presence of Inherent Reactor Residuals.
复制标题
存在固有反应器残留物时形成 GaP/Si(100) 异质界面。
DOI：
10.1021/acsami.5b02231
复制
发表时间：
2015
影响因子：
9.5
通讯作者：
T. Hannappel
中科院分区：
文献类型：
--
作者：
O. Supplie;M. May;C. Höhn;H. Stange;A. Müller;P. Kleinschmidt;S. Brückner;T. Hannappel
充分的硅制备是在Si上无缺陷III-V族生长的先决条件。我们将硅处理从清洁转移到含GaP的金属有机气相外延反应器，在那里我们用反射各向异性光谱法原位监测整个过程，并用X射线光电子能谱法分析表面的化学成分。在Si（100）表面上发现的（Ga，P）残留物超过一定的亚单层阈值时，GaP以倒置的多数亚晶格生长。类似于III-V族在两畴衬底上的生长，Si-Ga和Si-P界面键在相同类型的台阶处的共存导致GaP外延层中的反相无序。
Adequate silicon preparation is a prerequisite for defect-free III-V growth on Si. We transfer the silicon processing from clean to GaP containing metalorganic vapor phase epitaxy reactors, where we monitor the entire process in situ with reflection anisotropy spectroscopy and analyze the chemical composition of the surface with X-ray photoelectron spectroscopy. Beyond a certain submonolayer threshold value of (Ga,P) residuals found on the Si(100) surface, GaP grows with an inverted majority sublattice. Analogously to III-V growth on two-domain substrates, the coexistence of Si-Ga and Si-P interfacial bonds at terraces of the same type causes antiphase disorder in GaP epilayers.