A low loss, dielectric substrate in ZnAl2O4-TiO2 system for microelectronic applications -: art. no. 044101
A low loss, dielectric substrate in ZnAl2O4-TiO2 system for microelectronic applications -: art. no. 044101
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DOI：
10.1063/1.2007873
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发表时间：
2005-08-15
影响因子：
3.2
通讯作者：
Philip, J
中科院分区：
文献类型：
--
作者：
Surendran, KP;Sebastian, MT;Philip, J
以0.83ZnAl(2)O(4)-0.17TiO2(Zat)为基片，研制了一种温度稳定的低损耗基板，可替代Al_2O_3作为基板和封装材料应用于微电子工业。Zat的导热系数为59W·m(-1)K~(-1)，是Al_2O_3的两倍多。这种介质的热膨胀系数为6.3ppm/℃，与微电子线路中使用的硅的热膨胀系数相当。此外，0.83ZnAl(2)O(4)-0.17TiO2介电材料具有化学惰性，这增加了其在微电子封装中的适用性。(C)2005年美国物理研究所。
A temperature stable low loss substrate based on 0.83ZnAl(2)O(4)-0.17TiO(2) (ZAT) was developed as a substitute to Al2O3 for possible applications in microelectronic industry as substrates and packaging materials. The thermal conductivity of ZAT is 59 W m(-1) K-1 which is more than twice as that of Al2O3. The thermal-expansion coefficient of this dielectric is 6.3 ppm/degrees C which is comparable to that of silicon used in microelectronic circuitry. Furthermore, 0.83ZnAl(2)O(4)-0.17TiO(2) dielectric is chemically inert with silicon, which increases its applicability in microelectronic packages. (c) 2005 American Institute of Physics.