N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition
N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition
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DOI：
10.1016/j.jcrysgro.2009.01.059
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发表时间：
2009-05-01
影响因子：
1.8
通讯作者：
Han, Jung
中科院分区：
文献类型：
--
作者：
Sun, Qian;Cho, Yong Suk;Han, Jung
在这项工作中，我们报告的生长光滑，高品质的N面GaN的c面蓝宝石的金属有机化学气相沉积。结果表明，蓝宝石的氮化温度对N面GaN的表面形貌有重要影响。蓝宝石经过严重的氮化后，在N面GaN生长过程中产生了高密度的六方小丘。在适当氮化的蓝宝石上生长了光滑的N面GaN。通过会聚束电子衍射证实了GaN薄膜的N极性，没有反转畴。采用控制生长中断法研究了N面GaN生长过程中的成核演化，发现其与Ga面GaN的两步生长过程有明显的不同。原子光滑的N面GaN已经实现了与Ga面GaN相当的结构质量。(C)2009年由Elsevier B.V.出版
In this work, we report the growth of smooth, high-quality N-face GaN on c-plane sapphire by metalorganic chemical vapor deposition. It is found that the nitridation temperature of sapphire has a critical effect on the surface morphology of N-face GaN. Sapphire after a severe nitridation gives rise to a high density of hexagonal hillocks during N-face GaN growth. Smooth N-face GaN has been grown on appropriately nitridized sapphire. The N-polarity of the GaN film has been confirmed with no inversion domain by convergent beam electron diffraction. Controlled growth interruption is carried out to study the nucleation evolution during N-face GaN growth, which is found distinctly different from the two-step growth of Ga-face GaN. Atomically smooth N-face GaN has been achieved with comparable structural quality to Ga-face GaN. (C) 2009 Published by Elsevier B.V.