Polarization-induced Rashba spin-orbit coupling in structurally symmetric III-nitride quantum wells
Polarization-induced Rashba spin-orbit coupling in structurally symmetric III-nitride quantum wells
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DOI：
10.1063/1.2397559
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发表时间：
2006-11-27
影响因子：
4
通讯作者：
Litvinov, V. I.
中科院分区：
文献类型：
--
作者：
Litvinov, V. I.
计算了Ga面和N面InGaN量子阱的有效线性耦合系数和总的自旋分裂。结构反转不对称自旋-轨道耦合系数的符号取决于势垒中的内部电场，这导致了Ga面和N面Ⅲ-氮化物结构的不同符号。有效的线性耦合系数总是正的，因为Dresselhaus类型的贡献是所考虑的量子阱中的主要贡献。自旋分裂的大小与在III-氮化物和III-V闪锌矿结构中观察到的实验结果相当。(C)2006年美国物理研究所。
The effective linear coupling coefficient and the total spin splitting are calculated in Ga- and N-face InGaN quantum wells. The sign of structural inversion asymmetry spin-orbit coupling coefficient depends on an internal electric field in the well that results in different signs for Ga-face and N-face III-nitride structures. The effective linear coupling coefficient is always positive because of the Dresselhaus-type contribution that is a major one in quantum wells under consideration. The magnitude of the spin splitting is comparable with that experimentally observed in III-nitrides and III-V zinc-blende structures. (c) 2006 American Institute of Physics.