Improving rate capability and decelerating voltage decay of Li-rich layered oxide cathodes by chromium doping
Improving rate capability and decelerating voltage decay of Li-rich layered oxide cathodes by chromium doping
复制标题
通过铬掺杂提高富锂层状氧化物阴极的倍率性能并减缓电压衰减
DOI:
10.1016/j.ijhydene.2018.04.203
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发表时间:
2018-06
影响因子:
7.2
通讯作者:
Gui Weihua
中科院分区:
文献类型:
--
作者:
Li Huimian;Guo Huajun;Wang Zhixing;Wang Jiexi;Li Xinhai;Chen Ning;Gui Weihua
In order to improve the rate capability and mitigate the voltage decay of lithium rich layered oxides, chromium doped cathode materials Li1.2[Mn0.54Ni0.13Co0.13]1−xCrxO2(x = 0,0.003,0.005,0.007) is synthesized via co-precipitation method followed by calcination. As a result, Cr-doped samples present shortened voltage platform at 4.5 V, indicating that the escape of lattice oxygen is suppressed by Cr doping. Among all samples, Li1.2[Mn0.54Ni0.13Co0.13]1−xCrxO2(x = 0.005) sample shows the greatest rate capability (119.3 mAh g−1at 10 C) and the minimum voltage drop (0.6167 V) after 200 cycles at 1.0 C. The reasons for the improved electrochemical performance are the enhanced structural stability, the stronger Crsingle bondO bond than Mnsingle bondO band and the decreased metal–oxygen covalency induced by Cr doping.
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影响因子:
6.2
作者:
Yunjian Liu;Zhiqiang Zhang;Yan-bao Fu;Qiliang Wang;Jun Pan;Ming-Ru Su;V. Battaglia
通讯作者:
Yunjian Liu;Zhiqiang Zhang;Yan-bao Fu;Qiliang Wang;Jun Pan;Ming-Ru Su;V. Battaglia
影响因子:
17.6
作者:
Taolin Zhao;Li Li-Li;Renjie Chen;Huimin Wu;Xiaoxiao Zhang;Shi Chen;Man Xie;Feng Wu;Jun Lu
通讯作者:
Taolin Zhao;Li Li-Li;Renjie Chen;Huimin Wu;Xiaoxiao Zhang;Shi Chen;Man Xie;Feng Wu;Jun Lu
影响因子:
4.9
作者:
Yu Zhou;Huajun Guo;Guochun Yan;Zhixing Wang;Xinhai Li;Zhewei Yang;Anxiong Zheng;Jiexi Wang
通讯作者:
Yu Zhou;Huajun Guo;Guochun Yan;Zhixing Wang;Xinhai Li;Zhewei Yang;Anxiong Zheng;Jiexi Wang
影响因子:
3.2
作者:
Zimo Huang;Xinhai Li;Yuhao Liang;Zhenjiang He;Hao Chen;Zhixing Wang;Huajun Guo
通讯作者:
Zimo Huang;Xinhai Li;Yuhao Liang;Zhenjiang He;Hao Chen;Zhixing Wang;Huajun Guo
影响因子:
15.1
作者:
Zhiliang Yan;Hu Qiyang;Guochun Yan;Hangkong Li;K. Shih;Zhewei Yang;Xinhai Li;Zhixing Wang;
通讯作者:
Zhiliang Yan;Hu Qiyang;Guochun Yan;Hangkong Li;K. Shih;Zhewei Yang;Xinhai Li;Zhixing Wang;