Doping of polycrystalline CdTe for high-efficiency solar cells on flexible metal foil
Doping of polycrystalline CdTe for high-efficiency solar cells on flexible metal foil
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DOI：
10.1038/ncomms3306
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发表时间：
2013-08-01
影响因子：
16.6
通讯作者：
Tiwari, Ayodhya N.
中科院分区：
文献类型：
--
作者：
Kranz, Lukas;Gretener, Christina;Tiwari, Ayodhya N.
在柔性金属箔基板上的CdTe太阳能电池的卷对卷制造是低成本光伏模块生产的最有吸引力的选择之一。然而，在金属箔上生长CdTe太阳能电池的各种努力导致了低效率。这是由于常规器件结构必须反转的事实造成的，这对器件加工施加了严格的限制，从而限制了CdTe层的电子质量。在这里，我们介绍了一个创新的概念，通过蒸发亚单层量的铜和随后的退火，这使得突破效率高达13.6%的装置结构中的碲化镉层的控制掺杂。金属箔上的CdTe太阳能电池首次超过了10%的效率阈值，实现了产业化。CdTe与Cu的受控掺杂导致在太阳能电池中增加的空穴密度、增强的载流子寿命和改善的载流子收集。我们的研究结果提供了新的研究方向，以解决持续存在的挑战，碲化镉光致发光。
Roll-to-roll manufacturing of CdTe solar cells on flexible metal foil substrates is one of the most attractive options for low-cost photovoltaic module production. However, various efforts to grow CdTe solar cells on metal foil have resulted in low efficiencies. This is caused by the fact that the conventional device structure must be inverted, which imposes severe restrictions on device processing and consequently limits the electronic quality of the CdTe layer. Here we introduce an innovative concept for the controlled doping of the CdTe layer in the inverted device structure by means of evaporation of sub-monolayer amounts of Cu and subsequent annealing, which enables breakthrough efficiencies up to 13.6%. For the first time, CdTe solar cells on metal foil exceed the 10% efficiency threshold for industrialization. The controlled doping of CdTe with Cu leads to increased hole density, enhanced carrier lifetime and improved carrier collection in the solar cell. Our results offer new research directions for solving persistent challenges of CdTe photovoltaics.