Research on Negative Bias Temperature Instability Effects Under the Coupling of Total Ionizing Dose Irradiation for PDSOI MOSFETs
Research on Negative Bias Temperature Instability Effects Under the Coupling of Total Ionizing Dose Irradiation for PDSOI MOSFETs
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DOI：
10.1109/access.2021.3056151
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发表时间：
2021
期刊：
影响因子：
3.9
通讯作者：
C. Peng;R. Gao;Z. Lei;Zhangang Zhang;Yiqiang Chen;Y. En;Yun Huang
中科院分区：
文献类型：
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作者：
C. Peng;R. Gao;Z. Lei;Zhangang Zhang;Yiqiang Chen;Y. En;Yun Huang
研究了130 nm部分耗尽绝缘体上硅（PDSOI）工艺制备的pMOSFET在总电离剂量（TID）和负偏压温度不稳定性（NBTI）共同作用下的退化机理。TID和NBTI相关的退化显示出与栅极氧化物缩放相反的趋势，这意味着不同的陷阱在辐照和NBTI应力期间被激活。辐射诱导陷阱会影响pMOSFET的NBTI效应，尤其是在导通偏置辐照下。在相同的NBTI应力下，辐照后的I/O pMOSFET在早期应力阶段的阈值电压漂移小于未辐照的器件。这可能是由于在NBTI应力后，ON偏置照射增强Fowler-Nordheim电子注入。但辐照也使Core pMOSFET的时间指数n从0.11增加到0.13，I/O器件的时间指数n从0.18增加到0.20。这意味着NBTI退化在长时间尺度的ON偏置照射后变得更糟。这种现象是由于辐照引起的陷阱特性的变化。结果表明，在额定工作电压下，经过导通偏置辐照后，Core器件的NBTI寿命降低了近3个数量级，I/O器件的寿命降低了5倍。
The degradation mechanisms for pMOSFETs from a 130 nm partially-depleted silicon on insulator (PDSOI) technology under the combined effects of total ionizing dose (TID) and negative bias temperature instability (NBTI) are investigated. The TID and NBTI related degradations show an opposite trend as gate oxide scaling, which implies the different traps are activated during irradiation and NBTI stress. The radiation-induced traps can affect the NBTI effect of pMOSFET, especially for the ON bias irradiation. The irradiated I/O pMOSFET shows a smaller threshold voltage shift than the un-irradiated device under the same NBTI stress at the early stress stage. It may be contributed to the enhanced Fowler-Nordheim electron injection during NBTI stressing after ON bias irradiation. But the irradiation also increases the time exponent $n$ from 0.11 to 0.13 for Core pMOSFETs and from 0.18 to 0.20 for I/O devices. It means that the NBTI degradations become worse after ON bias irradiation in a long time scale. This phenomenon is attributed to the change of trap characteristics caused by irradiation. As a result, the NBTI lifetime of Core device is reduced by nearly three orders of magnitude and the lifetime of I/O device is reduced by five times after ON bias irradiation at the rated operating voltage.