Amplification of GaSb-Based Diode Lasers in an Erbium-Doped Fluoride Fibre Amplifier
Amplification of GaSb-Based Diode Lasers in an Erbium-Doped Fluoride Fibre Amplifier
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DOI:
10.1109/jphot.2023.3238078
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发表时间:
2023-02
影响因子:
2.4
通讯作者:
N. Chichkov;A. Yadav;F. Joulain;S. Cozic;S. Smirnov;L. Shterengas;J. Scheuermann;R. Weih;J. Koeth;S. Höfling;U. Hinze;S. Poulain;E. Rafailov
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文献类型:
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作者:
N. Chichkov;A. Yadav;F. Joulain;S. Cozic;S. Smirnov;L. Shterengas;J. Scheuermann;R. Weih;J. Koeth;S. Höfling;U. Hinze;S. Poulain;E. Rafailov
Building upon recent advances in GaSb-based diode lasers and Er-doped fluoride fibre technologies, this article demonstrates for the first time the fibre-based amplification of mid-infrared diode lasers in the wavelength range around 2.78 $\mu$m. The laser setup consists of a GaSb-based diode laser and a single-stage Er-doped fibre amplifier. Amplification is investigated for continuous wave (CW) and ns-pulsed input signals, generated by gain-modulation of the GaSb-based seed lasers. The experimental results include the demonstration of output powers up to 0.9 W, pulse durations as short as 20 ns, and pulse repetition rates up to 1 MHz. Additionally, the amplification of commercial and custom-made GaSb-based seed lasers is compared and the impact of different fibre end-cap materials on laser performance is analysed.