Valence State‐Dependent Ferromagnetism in Mn‐Doped NiO Thin Films
Valence State‐Dependent Ferromagnetism in Mn‐Doped NiO Thin Films
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DOI：
10.1002/adma.201103436
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发表时间：
2012-01
影响因子：
29.4
通讯作者：
Wensheng Yan;Zhihu Sun;Zhongrui Li;Qinghua Liu;T. Yao;Z. Pan;Chao Wang;F. Hu;Yong Jiang
中科院分区：
文献类型：
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作者：
Wensheng Yan;Zhihu Sun;Zhongrui Li;Qinghua Liu;T. Yao;Z. Pan;Chao Wang;F. Hu;Yong Jiang
通过调节掺杂离子的价态来操纵稀磁半导体的铁磁性被发现在Mn掺杂的NiO中是可以实现的。第一性原理计算表明，NiO中Mn（3+）离子间的相互作用是铁磁性的，而Mn（2+）-Mn（2+）之间的相互作用是反铁磁性的.实验结果表明，在Mn掺杂和（Mn，Li）共掺杂的NiO中，随着Mn（3+）/Mn（2+）比值的增加，饱和磁化强度显著增强。
Manipulating the ferromagnetism of diluted magnetic semiconductors by tuning the valence state of doped ions is found to be achievable in Mn-doped NiO. First-principles calculations predict that the interactions between substitutional Mn(3+) ions in NiO are ferromagnetic, while the Mn(2+)-Mn(2+) interactions are antiferromagnetic. This scenario is experimentally supported by a great enhancement of saturation magnetization with increased Mn(3+)/Mn(2+) ratio in Mn-doped and (Mn, Li)-codoped NiO.