The nature of electrically inactive antimony in silicon
The nature of electrically inactive antimony in silicon
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硅中电惰性锑的性质
DOI：
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发表时间：
1986
期刊：
影响因子：
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通讯作者：
A. Armigliato
中科院分区：
文献类型：
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作者：
A. Larsen;F. T. Pedersen;G. Weyer;R. Galloni;R. Rizzoli;A. Armigliato
通过离子注入和短时间非相干光退火，在 <100> 硅单晶中获得了替代性电活性 Sb 的过饱和溶液。通过卢瑟福背散射和沟道技术、透射电子显微镜、霍尔效应和电阻率测量（与层去除相结合）以及穆斯堡尔光谱，研究了取代和非取代分数作为注入剂量和退火温度的函数。对于 700°C 退火，发现可以纳入未受干扰的取代位点的最大电活性浓度为 4.5×1020 Sb/cm3。进一步退火后，过饱和溶液被还原并在约 1100°C 的温度下接近 Trumbore 溶解度值。首次显示从溶液中出来的 Sb 是在两种不同的环境中产生的：Sb 主要存在于低剂量和低退火温度的 Sb 空位配合物中，以及 Sb 预冷剂中。
Supersaturated solutions of substitutional, electrically active Sb in 〈100〉 silicon single crystals have been obtained by ion implantation, followed by short‐duration incoherent‐light annealing. Substitutional and nonsubstitutional fractions have been studied as functions of implanted dose and anneal temperature by Rutherford backscattering and channeling techniques, transmission‐electron microscopy, Hall‐effect and resistivity measurements (combined with layer removal), and Mossbauer spectroscopy. The maximum electrically active concentration, which can be incorporated on undisturbed substitutional sites, is found to be 4.5×1020 Sb/cm3 for 700 °C annealing. Upon further annealing, the supersaturated solution is reduced and approaches the Trumbore solubility value at temperatures of about 1100 °C. The Sb going out of solution is shown for the first time to be created in two different surroundings: Sb is predominantly found in Sb‐vacancy complexes for low doses and low annealing temperatures and in Sb prec...