Enhanced Photoluminescence of Solution-Exfoliated Transition Metal Dichalcogenides by Laser Etching
Enhanced Photoluminescence of Solution-Exfoliated Transition Metal Dichalcogenides by Laser Etching
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DOI：
10.1021/acsomega.6b00294
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发表时间：
2017-02-01
期刊：
影响因子：
4.1
通讯作者：
Dryfe, Robert A. W.
中科院分区：
文献类型：
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作者：
Bissett, Mark A.;Hattle, Andrew G.;Dryfe, Robert A. W.
使用传统的拉曼实验装置，我们表明，光致发光（PL）产率从超声剥离过渡金属二硫属化物（TMDs）（二硫化钼和WS2）可以增加高达8倍，通过激光蚀刻程序。这种激光蚀刻工艺使我们能够可控地图案化并减少溶液剥离材料的层数，克服了用于光电子应用的二维（2D）半导体材料的溶剂基剥离的关键缺点。通过拉曼光谱和光致发光谱的变化，系统地研究了剥离后二维晶体的激光减薄。一个简单的证明的原则，这种激光蚀刻技术的可扩展性的解决方案剥离的TMD晶体也被证明。除了适用于个别材料外，还可以使用这种简单的激光蚀刻技术来研究溶液生成的范德瓦尔斯货车异质结构的结构，该异质结构由MoS 2和WS 2层组成。
Using a conventional Raman experimental apparatus, we demonstrate that the photoluminescent (PL) yield from ultrasonication-exfoliated transition metal dichalcogenides (TMDs) (MoS2 and WS2) can be increased by up to 8-fold by means of a laser etching procedure. This laser etching process allows us to controllably pattern and reduce the number of layers of the solution-exfoliated material, overcoming the key drawback to solvent-based exfoliation of two-dimensional (2D) semiconducting materials for applications in optoelectronics. The successful laser thinning of the exfoliated 2D crystals was investigated systematically by changes in both Raman and PL spectra. A simple proof-of-principle of the scalability of this laser etching technique for solution-exfoliated TMD crystals was also demonstrated. As well as being applicable for individual materials, it is also possible to use this simple laser etching technique to investigate the structure of solution-generated van der Waals heterostructures, consisting of layers of both MoS2 and WS2.