High Mobility Thin Film Transistors Fabricated on a Plastic Substrate at a Processing Temperature of 110°C
High Mobility Thin Film Transistors Fabricated on a Plastic Substrate at a Processing Temperature of 110°C
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在 110°C 加工温度下在塑料基板上制造的高迁移率薄膜晶体管
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
S. Usui
中科院分区：
文献类型：
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作者：
D. Gosain;T. Noguchi;S. Usui
我们介绍了在塑料衬底上制作的准分子激光加工多晶硅薄膜晶体管的结果。除了准分子激光辐照结晶过程中的温升外，衬底的最高加工温度为110℃。在这些器件中测得晶体管的场效应迁移率为250cm2/V·S，亚阈值摆幅为0.16V/ten。这些是迄今为止报道的塑料衬底上薄膜晶体管(TFT)的最佳特性。这一性能归功于我们优化的氦溅射硅薄膜的激光晶化工艺、激光辅助的低温掺杂工艺和瞬时退火法。
We present results from excimer laser processed poly-silicon thin film transistors fabricated on a plastic substrate. Except for the temperature rise during excimer laser irradiation for crystallization, the highest processing temperature that the substrate was subjected to was 110°C. Transistor field-effect mobility of 250 cm2/V·s and sub-threshold swing of 0.16 V/decade were measured in these devices. These are the best characteristics reported to date for a thin film transistor (TFT) on a plastic substrate. The performance is attributed to our optimized laser crystallization process of helium sputtered Si films, laser-assisted low-temperature doping processes, and transient annealing.