Nanoscale Turing patterns in a bismuth monolayer
Nanoscale Turing patterns in a bismuth monolayer
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DOI:
10.1038/s41567-021-01288-y
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发表时间:
2021-07-08
期刊:
影响因子:
19.6
通讯作者:
Kapitulnik, Aharon
中科院分区:
文献类型:
--
作者:
Fuseya, Yuki;Katsuno, Hiroyasu;Kapitulnik, Aharon
Turing's reaction-diffusion theory of morphogenesis has been very successful for understanding macroscopic patterns within complex objects ranging from biological systems to sand dunes. However, Turing patterns on microscopic length scales are extremely rare. Here we show that a strained atomic bismuth monolayer assembled on the surface of NbSe2-and subject to interatomic interactions and kinetics-displays Turing patterns. Our reaction-diffusion model produces stripe patterns with a period of five atoms (approximately 2 nm) and domain walls with Y-shaped junctions that bear a striking resemblance to what has been experimentally observed. Our work establishes that Turing patterns can occur at the atomic scale in a hard condensed-matter setting.Macroscale patterns seen in biological systems such as animal coats or skin can be described by Turing's reaction-diffusion theory. Now Turing patterns are shown to also exist in bismuth monolayers, an exemplary nanoscale atomic system.