Carrier-mediated interlayer exchange, ground-state phase diagrams, and transition temperatures of magnetic thin films
Carrier-mediated interlayer exchange, ground-state phase diagrams, and transition temperatures of magnetic thin films
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磁性薄膜的载流子介导的层间交换、基态相图和转变温度
DOI：
10.1103/physrevb.84.094417
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发表时间：
2011
影响因子：
3.7
通讯作者：
W. Nolting
中科院分区：
文献类型：
--
作者：
M. Stier;W. Nolting
研究了载流子浓度等参数对磁性薄膜层间交换的影响。该系统由铁磁层和非磁性层组成，其中允许载流子从一层移动到另一层。对于铁磁层，我们使用近藤晶格模型来描述巡游电子和本地时刻之间的相互作用。电子的性质由绿色函数的运动方程方法计算，而局部磁矩的磁化强度由自由能的最小化确定。作为结果，我们提出了磁相图和层间交换在一个广泛的参数范围。此外，我们还可以计算出铁磁层磁化方向不同时的转变温度。
We investigate the influence of the carrier density and other parameters on the interlayer exchange in magnetic thin film systems. The system consists of ferromagnetic and non-magnetic layers where the carriers are allowed to move from layer to layer. For the ferromagnetic layers we use the Kondo-lattice model to describe interactions between itinerant electrons and local moments. The electrons' properties are calculated by a Green's function's equation of motion approach while the magnetization of the local moments is determined by a minimization of the free energy. As results we present magnetic phase diagrams and the interlayer exchange over a broad parameter range. Additionally we can calculate the transition temperatures for different alignments of the ferromagnetic layers' magnetizations.