Effects of γ-ray irradiation on optical absorption and laser damage performance of KDP crystals containing arsenic impurities
Effects of γ-ray irradiation on optical absorption and laser damage performance of KDP crystals containing arsenic impurities
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DOI：
10.1364/oe.22.029020
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发表时间：
2014-11-17
期刊：
影响因子：
3.8
通讯作者：
Zu, X. T.
中科院分区：
文献类型：
--
作者：
Guo, D. C.;Jiang, X. D.;Zu, X. T.
用紫外-可见吸收光谱、光热共光路干涉仪和光致发光光谱等光学诊断方法研究了辐照对含砷磷酸二氢钾晶体的影响。光学吸收光谱表明，辐照后在260 nm附近出现了一个新的宽吸收带。结果表明，随着辐照剂量的增加和砷杂质浓度的增加，吸收带强度增大。对辐射缺陷的模拟表明，这种吸收归因于砷离子取代磷离子而形成的AsO44-中心。利用355 nm纳秒激光脉冲进行了激光损伤阈值测试。给出了砷杂质浓度与激光损伤阈值之间的关系。结果表明，随着砷杂质浓度的增加，材料的损伤性能降低。讨论了KDP晶体在伽马辐照下产生缺陷的可能机制。(C)2014年美国光学学会
The effects of gamma-irradiation on potassium dihydrogen phosphate crystals containing arsenic impurities are investigated with different optical diagnostics, including UV-VIS absorption spectroscopy, photo-thermal common-path interferometer and photoluminescence spectroscopy. The optical absorption spectra indicate that a new broad absorption band near 260 nm appears after gamma-irradiation. It is found that the intensity of absorption band increases with the increasing irradiation dose and arsenic impurity concentration. The simulation of radiation defects show that this absorption is assigned to the formation of AsO44- centers due to arsenic ions substituting for phosphorus ions. Laser-induced damage threshold test is conducted by using 355 nm nanosecond laser pulses. The correlations between arsenic impurity concentration and laser induced damage threshold are presented. The results indicate that the damage performance of the material decreases with the increasing arsenic impurity concentration. Possible mechanisms of the irradiation-induced defects formation under gamma-irradiation of KDP crystals are discussed. (C) 2014 Optical Society of America