STM observation of Bi line structures on the Si(1 0 0) surface with Ag deposition
STM observation of Bi line structures on the Si(1 0 0) surface with Ag deposition
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Ag 沉积 Si(1 0 0) 表面 Bi 线结构的 STM 观察
DOI：
10.1016/j.apsusc.2004.10.076
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发表时间：
2005
影响因子：
6.7
通讯作者：
F. Shoji
中科院分区：
文献类型：
--
作者：
T. Itoh;S. Kashirajima;M. Naitoh;S. Nishigaki;F. Shoji
利用扫描隧道显微镜（STM）研究了Si（100）表面Bi线结构（BLS）的动态形成过程及其与杂质原子的反应动力学。在400-500°C下沉积铋之后，在Si（100）表面上形成由Bi二聚体组成的BLS。从连续的STM图像后，Bi沉积在表面上，我们发现，BLS生长的前面的台阶时，很容易形成BLS包含表面缺陷。当Ag原子沉积在含有BLS的Si（100）表面上时，我们发现Ag原子优先吸附在Si平台上而不是BLS上。
We report a dynamic formation process of Bi line structures (BLS) and their reaction dynamics with foreign atoms on Si(100) surfaces by scanning tunneling microscopy (STM). BLSs consisting of Bi dimers are formed on the Si(100) surface after bismuth deposition at 400–500°C. From consecutive STM images taken after Bi deposition on the surface, we found that BLSs are easily formed when the terraces at the front of the BLS growth contains surface defects. When Ag atoms were deposited on the Si(100) surface containing the BLSs, we found that Ag atoms are preferentially adsorbed on the Si terraces rather than on BLSs.