Correlation between electron spin relaxation time and hetero-interface roughness in (110)-oriented GaAs/AlGaAs multiple-quantum wells
Correlation between electron spin relaxation time and hetero-interface roughness in (110)-oriented GaAs/AlGaAs multiple-quantum wells
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DOI：
10.1016/j.physe.2009.01.009
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发表时间：
2009-03-01
影响因子：
3.3
通讯作者：
Kawaguchi, Hitoshi
中科院分区：
文献类型：
--
作者：
Iba, Satoshi;Fujino, Hiroshi;Kawaguchi, Hitoshi
利用分子束外延生长过程中的生长中断，研究了（11 - 10）取向GaAs/AlGaAs多量子阱（MQWs）中电子自旋弛豫时间τ (s)与异质界面粗糙度的关系。利用偏振分辨和时间分辨的PL测量对tau(s)进行了表征，并利用4 K时PL光谱的半最大全宽来评估异质界面的粗糙度。结果发现，当使用生长中断降低界面粗糙度时，具有光滑界面的mqw中的tau(s)变长，并且tau(s)的温度依赖性从类似于T（0.6）到T（0.9）的tau(s)变化。这些结果表明，在具有光滑异质界面的mqw中，D‘yakonov- perel ’机制的结构反转不对称项被抑制。(C) 2009 Elsevier B.V.版权所有
The correlation between the electron spin relaxation time tau(s) and the hetero-interface roughness in (1 1 0)-oriented GaAs/AlGaAs multiple-quanturn wells (MQWs) was investigated using growth interruption during molecular beam epitaxy growth. tau(s) was characterized using polarization- and time-resolved PL measurements, and the hetero-interface roughness was evaluated by the full-width-at-half-maximum of the PL spectra at 4 K, It was found that tau(s) in the MQWs with smooth interfaces became longer and the temperature dependence of tau(s) changed from tau(s)similar to T(0.6)-T(0.9) when the interface roughness was reduced using growth interruption. These results indicate that the structure inversion asymmetry term of the D'yakonov-Perel' mechanism was suppressed in the MQWs with smooth heterointerfaces. (C) 2009 Elsevier B.V. All rights reserved.