Synthesis of large areas of highly oriented, very long silicon nanowires
Synthesis of large areas of highly oriented, very long silicon nanowires
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DOI：
10.1002/1521-4095(200009)12:18
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发表时间：
2000-09-15
影响因子：
29.4
通讯作者：
Lee, ST
中科院分区：
文献类型：
--
作者：
Shi, WS;Peng, HY;Lee, ST
纳米硅是一种非常重要的电子材料，具有有趣的性质，但例如，硅纳米线的研究一直受到定向样品制造困难的阻碍。作者在这里报告了通过热蒸发一氧化硅成功地合成了大面积的高度定向的、非常长(1.5-2毫米)的硅纳米线-如图所示。
Nanoscale forms of silicon,a very important electronic material, have interesting properties, but the investigation of Si nanowires, for example, has been hampered by difficulties in producing oriented samples. The authors report here the successful synthesis of large areas of highly oriented, very long (1.5–2 mm) Si nanowires—as shown in the Figure—by thermal evaporation of silicon monoxide.